Effect of annealing temperature on photoluminescence and resistive switching characteristics of ZnO/Al2O3multilayer nanostructures uri icon

autores

  • Maria de Jesus de Matos Gomes
  • Sekhar, K.C.
  • Kamakshi, K.
  • Bernstorff, S.
  • Gomes, M.J.M.

data de publicação

  • janeiro 1, 2015