autores José Pedro Basto da Silva Maria de Jesus de Matos Gomes J. P. B. Silva Sekhar, K. C. Agostinho Moreira, J. J. Wang G. Koster Gomes, M. J. M. G. Rijnders Silva, José Pedro Basto Negrea, R.F. Wang, J. C. Ghica Koster, G. K. C. Sekhar Rijnders, G J. Agostinho Moreira Negrea, R. Ghica, C. Gomes, M.J.M.
palavras-chave Capacitance−voltage characteristics Ferroelectric properties Interfacial coupling effect Metal−ferroelectric−semiconductor structures Resistive switching