Correlation between structural and electrical properties of MOS structures based on Ge nanocrystals embedded in SiO2 grown by RF- magnetron sputtering S. Levichev, E. M. F. Vieira, J. Martín-Sánchez, O. Karzazi, A. Chahboun, M. Buljan, S. Bernstorff, and M.J.M.Gomes E-MRS 2011 Spring & Bilateral Meeting, Symposium C: Size-dependent properties of Nanomaterials, Acropolis Congress Centre, France uri icon

autores

  • Maria de Jesus de Matos Gomes

data de publicação

  • janeiro 1, 2011