Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlOx structures for non-volatile memory applications uri icon

autores

  • Maria de Jesus de Matos Gomes
  • Mario Antonio CAIXEIRO DE CASTRO PEREIRA
  • Faita, F.L.
  • Silva, J.P.B.
  • Gomes, M.J.M.

data de publicação

  • janeiro 1, 2015